unisonic technologies co., ltd 2N80Z power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2012 unisonic technologies co., ltd qw-r502-828.a 2 a , 800v n-channel power mosfet ? description the utc 2N80Z is an n-channel mode power mosfet using utc?s advanced technology to prov ide costumers planar stripe and dmos technology. this technology is specialized in allowing a minimum on-state resistance and supe rior switching performance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 2N80Z is universally applied in high efficiency switch mode power supply. ? features * r ds(on) = 6.3 ? @v gs = 10 v * high switching speed ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 2N80Zl-tf3-t 2N80Zg-tf3-t to-220f g d s tube note: pin assignment: g: gate d: drain s: source
2N80Z power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-828.a ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 800 v gate-source voltage v gss 20 v avalanche current (note 1) i ar 2.4 a drain current continuous i d 2.4 a pulsed (note 1) i dm 9.6 a avalanche energy single pulsed (note 2) e as 180 mj repetitive (note 1) e ar 8.5 mj peak diode recovery dv/dt (note 3) dv/dt 4.0 v/ns power dissipation p d 24 w junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. repetitive rating: pulse widt h limited by maximum junction temperature 2. l = 59mh, i as = 2.4a, v dd = 50v, r g = 25 ? , starting t j = 25c 3. i sd 2.4a, di/dt 200a/s, v dd bv dss , starting t j = 25c 4. absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 5.2 c/w ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 800 v breakdown voltage temperature coefficient bv dss / t j reference to 25c, i d =250a 0.9 v/c drain-source leakage current i dss v ds =800v, v gs =0v 10 a v ds =640v, t c =125c 100 gate- source leakage current forward i gss v gs =+20v, v ds =0v 5 a reverse v gs =-20v, v ds =0v -5 a on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 3.0 5.0 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =1.2a 4.8 6.3 ? forward transconductance (note 1) g fs v ds =50v, i d =1.2a 2.65 s dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 425 550 pf output capacitance c oss 45 60 pf reverse transfer capacitance c rss 5.5 7.0 pf
2N80Z power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-828.a ? electrical characteristics(cont.) parameter symbol test conditions min typ max uni t switching parameters total gate charge q g v gs =10v, v ds =640v, i d =2.4a (note 1,2) 12 15 nc gate to source charge q gs 2.6 nc gate to drain charge q gd 6.0 nc turn-on delay time t d ( on ) v dd =400v, i d =2.4a, r g =25 ? (note 1,2) 12 35 ns rise time t r 30 70 ns turn-off delay time t d ( off ) 25 60 ns fall-time t f 28 65 ns source- drain diode ratings and characteristics maximum continuous drain-source diode forward current i s 2.4 a maximum pulsed drain-source diode forward current i sm 9.6 a drain-source diode forward voltage v sd i s =2.4a, v gs =0v 1.4 v reverse recovery time (note 1) t rr i s =2.4a, v gs =0v, di f /dt=100a/s 480 ns reverse recovery charge (note 1) q rr 2.0 c notes: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature
2N80Z power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-828.a ? test circuits and waveforms v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd peak diode recovery dv/d t test circuit & waveforms same type as dut i sd v gs l v gs (driver ) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current driver
2N80Z power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-828.a ? test circuits and waveforms(cont.) 50k ? 300nf dut v ds 10v 12v charge q gs q gd q g v gs v gs 200nf same type as dut 3ma gate charge test circui t gate charge waveforms resistive switching test circui t resistive switching waveforms 10v t p r g dut l v ds i d v dd t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching test circuit unclamped inductive switching waveforms
2N80Z power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-828.a ? typical characteristics drain current, i d (a) drain current, i d (a) drain current, i d (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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